At the International Symposium on Applications of Ferroelectrics (ISAF 2025) in Graz, Austria, our laboratory was represented by PhD student Tom Iung, who delivered an oral presentation titled "Oxygen Vacancy Distribution and Phase Composition in Scaled Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Capacitors." We want to acknowledge the ANR-DFG D3PO and Ferro4EdgeAI projects (https://www.ferro4edgeai.eu/) for the support as well as STMicroelectronics.

ISAF 2025 featured a strong lineup of talks on hafnia-based ferroelectrics. Strain and stress emerged as particularly trendy topics, highlighted by discussions on stoichiometry changes and their impact on material properties. Among the most notable academic contributions were:

·       Takao Shimizu (NIMS) – Robust Ferroelectricity in Y-Doped HfO₂ Materials

·       Hiroshi Funakobo (Tokyo Institute of Technology) – Epitaxial Y-Doped HfO₂ Films and Lattice Effects

·       Jon Ihlefeld (University of Virginia) – Oxygen Diffusion in Ferroelectric HZO

·       Uwe Schroeder (NaMLab) – Strain Engineering for Thickness Scaling

·       Min Huyk Park (Seoul National University) – Stress Effects from Substrates and Film Thicknesses

Industry sessions also attracted interest, including:

·       Mikhaela Popovici (IMEC) – Wake-Up Free HZO Capacitors Using MoOx Seed Layers

·       Tony Schenk (FMC) – Benchmarking Progress in HfO₂-Based FeRAM.