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Tom’s defense

Congratulations to Dr. Tom Iung, for the succesful defense of his thesis on April 21st. His subject based on “Hafnia-based ferroelectric field-effect transistor stacks: correlations between physical properties and device performances” was conjointly supervised by Nick Barrett (CEA) and Mickael Gros-Jean (STMicroelectronics). The discussions with a highly distinguished international jury were certainly fruitful and they contribute to the future work in our team.

Précédent
Précédent
24 mars

High-k workshop: 20 Years Ferroelectric Doped HfO2

Suivant
Suivant
22 mai

New article published in Materials Today Communications