The Novel High-k workshop (https://www.namlab.com/high-k-workshop-2026-march-24-25th) was held from March 24th to 26th at NaMLab in Dresden, Germany. The 20th anniversary of the discovery of ferroelectric doped HfO2 was celebrated by 36 oral presentations, ranging from theoretical and experimental studies on ferroelectricity in HfO2 to device applications of ferroelectric doped HfO2.
In the workshop, Tim Böscke (from ams OSRAM, Germany) opened the session with a talk about the historical starting point of ferroelectric HfO2, “How everything started at Qimonda”. Jorge Íñiguez-González (LIST, Luxembourg) delivered a presentation on the theoretical research of the crystal phase and polarization in “Factors controlling the sign of the polarization in hafnia ferroelectrics”. Alexei Gruverman (Univ. Lincoln, USA) gave talk about polarization and conductivity of HfO2 and AlScN in “Nanoscale insight into the ferroelectric and piezoelectric properties of HfO2-based thin films” and “Conducting domain walls in ferroelectric Al1-xScxN thin film capacitors.” In addition to the academic discussions, a panel discussion took place with IMEC, Sony, FMC, IPMS, and GlobalFoundries about the future of HfO2 ferroelectric devices and the key outstanding problems to be solved.
Ferro4EdgeAI was strongly represented by CEA/SPEC/LENSIS (France), CEA/LETI (France), NaMLab (Germany), and international collaborator Cheol Seong Hwang (Seoul National University, South Korea). Eun Jin Koh (LENSIS) presented a poster on “Effect of nano-laminate structure on the oxygen vacancy concentration in Hf1-xZrxO2 thin film,” and Jayshree Dadheech (LENSIS) introduced a poster on “Impact of Ta and TaOx interlayers on the interface chemistry of ferroelectric Hafnium Zirconate”. Laurent Grenouillet (LETI) delivered talks on “transitioning from 2D to 3D ferroelectric capacitors in FeRAM arrays”. Ruben Alcala and Stefan Slesazeck (NaMLab) gave oral presentations on “Material Optimization for improved Reliability in HZO” and “Y2O3 based Ferroelectric tunnelling junction for In-Memory-Computing crossbar arrays” respectively. Cheol Seong Hwang delivered remarks on “A journey to ferroelectric HfO2” and “Proximity ferroelectricity in stacked hard/soft ferroelectric films”.
Jayshree Dadheech, Lucía Pérez Ramírez, Ruben Alcala, and Eun Jin Koh, in front of Eun Jin’s poster.
Informal discussions
This work supported by Ferro4EdgeAI projects (https://www.ferro4edgeai.eu/ ) and by the FerroFutures project of PEPR Electronique (ANR-23-PEEL-0003).
