We are thrilled to announce that our work on interface chemistry and oxygen-vacancy distribution in ferroelectric Hf₀.₅Zr₀.₅O₂ (HZO) FeFET stacks titled “X-ray photoelectron spectroscopy study of gate/ferroelectric interface chemistry in metal–ferroelectric–insulator–semiconductor stacks” has been published in the Journal of Applied Physics.

This article presents an XPS-based study of the evolution of the TiN/HZO interface during thermal processing, providing new insights into oxygen scavenging, interfacial defect formation, and their impact on the local electrostatic properties of the device.

This work was carried out as part of Tom Iung’s PhD thesis at LENSIS, in collaboration with STMicroelectronics.

Read more: https://doi.org/10.1063/5.0336395